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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220F package High voltage ,high speed APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING PIN 1 2 3 Base Collector DESCRIPTION MJF18004 Fig.1 simplified outline (TO-220F) and symbol Emitter Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Open emitter Open base Emitter-base voltage Collector current (DC) Collector current-Peak CHA E SEM NG TC=25ae Open collector DUC CON I CONDITIONS VALUE 1000 450 9 5 10 2 4 40 150 TOR UNIT V V V A A A A W ae ae Base current Base current-Peak Total power dissipation Junction temperature Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient MAX 3.12 62.5 ae UNIT ae /W /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=1A ;IB=0.1A TC=125ae IC=2A ;IB=0.4A TC=125ae IC=2.5A ;IB=0.5A IC=1A ;IB=0.1A IC=2A ;IB=0.4A IC=2.5A ;IB=0.5A MIN 450 MJF18004 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 VBEsat-3 TYP. MAX UNIT V 0.5 0.6 0.45 0.8 0.75 1.1 1.25 1.3 0.1 0.5 V V V V V V ICES Collector cut-off current VCES=RatedVCES; VEB=0 TC=125ae ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency ANG H VCES=800V VCE=RatedVCEO; IB=0 INC E SEM VEB=9V; IC=0 OND IC TOR UC 0.1 0.1 0.1 36 mA mA mA IC=1A ; VCE=2.5V IC=1A ; VCE=5V IC=2A ; VCE=1V IC=5mA ; VCE=5V 12 14 6 10 13 45 MHz pF IC=0.5A ; VCE=10V;f=1.0MHz IE=0 ; VCB=10V;f=1.0MHz 10%,Pulse Width=20|I s Collector outoput capacitance Switching times resistive load,Duty CycleU ton ts tf Turn-on time Storage time Fall time 0.6 VCC=250V ,IC=2.5A IB1=0.5A; IB2=0.5A 3.0 0.4 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJF18004 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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